Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel

This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability...

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Bibliographic Details
Main Authors: Natalia Vetrova, Evgeny Kuimov, Vladimir Sinyakin, Sergey Meshkov, Mstislav Makeev, Vasiliy Shashurin
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Sensors
Subjects:
mathematical modeling
resonant-tunneling structures
hysteresis
self-consistent potential
resonant levels
semiconductor epitaxial layers
Online Access:https://www.mdpi.com/1424-8220/23/18/7977

Internet

https://www.mdpi.com/1424-8220/23/18/7977

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