Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel
This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability...
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| Format: | Article |
| Language: | English |
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MDPI AG
2023-09-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/23/18/7977 |
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| author | Natalia Vetrova Evgeny Kuimov Vladimir Sinyakin Sergey Meshkov Mstislav Makeev Vasiliy Shashurin |
| author_facet | Natalia Vetrova Evgeny Kuimov Vladimir Sinyakin Sergey Meshkov Mstislav Makeev Vasiliy Shashurin |
| author_sort | Natalia Vetrova |
| collection | DOAJ |
| description | This paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes. |
| first_indexed | 2024-03-10T22:01:28Z |
| format | Article |
| id | doaj.art-798424bf804746988db4c925a210a031 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-10T22:01:28Z |
| publishDate | 2023-09-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-798424bf804746988db4c925a210a0312023-11-19T12:56:56ZengMDPI AGSensors1424-82202023-09-012318797710.3390/s23187977Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural ChannelNatalia Vetrova0Evgeny Kuimov1Vladimir Sinyakin2Sergey Meshkov3Mstislav Makeev4Vasiliy Shashurin5Research Institute of Radio Electronics and Laser Technology, Bauman Moscow State Technical University, 105005 Moscow, RussiaResearch Institute of Radio Electronics and Laser Technology, Bauman Moscow State Technical University, 105005 Moscow, RussiaResearch Institute of Radio Electronics and Laser Technology, Bauman Moscow State Technical University, 105005 Moscow, RussiaResearch Institute of Radio Electronics and Laser Technology, Bauman Moscow State Technical University, 105005 Moscow, RussiaResearch Institute of Radio Electronics and Laser Technology, Bauman Moscow State Technical University, 105005 Moscow, RussiaResearch Institute of Radio Electronics and Laser Technology, Bauman Moscow State Technical University, 105005 Moscow, RussiaThis paper presents an effective compact model of current transfer for the estimation of hysteresis parameters on the volt-ampere characteristics of resonant-tunneling diodes. In the framework of the compact model, the appearance of hysteresis is explained as a manifestation of internal bistability due to interelectronic interaction in the channel of the resonant-tunneling structure. Unlike the models based on the method of equivalent circuits, the interelectronic interaction in the compact model is taken into account using the concentration parameter. Model validation allowed us to confirm the high accuracy of the model not only at the initial section of the volt-ampere characteristics, but also at the hysteresis parameters traditionally predicted with low accuracy, namely the loop width (∆ < 0.5%) and contrast (∆ < 7%). Thus, it is concluded that the models are promising for integration into systems for synthesizing the electrical characteristics of resonant-tunneling diodes.https://www.mdpi.com/1424-8220/23/18/7977mathematical modelingresonant-tunneling structureshysteresisself-consistent potentialresonant levelssemiconductor epitaxial layers |
| spellingShingle | Natalia Vetrova Evgeny Kuimov Vladimir Sinyakin Sergey Meshkov Mstislav Makeev Vasiliy Shashurin Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel Sensors mathematical modeling resonant-tunneling structures hysteresis self-consistent potential resonant levels semiconductor epitaxial layers |
| title | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
| title_full | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
| title_fullStr | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
| title_full_unstemmed | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
| title_short | Bistability of AlGaAs/GaAs Resonant-Tunneling Diodes Heterostructural Channel |
| title_sort | bistability of algaas gaas resonant tunneling diodes heterostructural channel |
| topic | mathematical modeling resonant-tunneling structures hysteresis self-consistent potential resonant levels semiconductor epitaxial layers |
| url | https://www.mdpi.com/1424-8220/23/18/7977 |
| work_keys_str_mv | AT nataliavetrova bistabilityofalgaasgaasresonanttunnelingdiodesheterostructuralchannel AT evgenykuimov bistabilityofalgaasgaasresonanttunnelingdiodesheterostructuralchannel AT vladimirsinyakin bistabilityofalgaasgaasresonanttunnelingdiodesheterostructuralchannel AT sergeymeshkov bistabilityofalgaasgaasresonanttunnelingdiodesheterostructuralchannel AT mstislavmakeev bistabilityofalgaasgaasresonanttunnelingdiodesheterostructuralchannel AT vasiliyshashurin bistabilityofalgaasgaasresonanttunnelingdiodesheterostructuralchannel |