Properties of B- and Si-doped monolayer black phosphorus under biaxial strain

The properties of monolayer black phosphorus, B-doped black phosphorus and Si-doped black phosphorus under biaxial strain are studied by first-principles calculations. The computed bandgaps of black phosphorus and B-doped black phosphorus without strain are 0.92 eV and 0.61 eV, respectively. The ban...

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Bibliographic Details
Main Authors: Yangfan Li, Tianxing Wang, Yipeng An, Xiao Dong
Format: Article
Language:English
Published: Elsevier 2023-11-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379723008847