Buffer layer-assisted growth of Ge nanoclusters on Si

Buffer layer-assisted growth of Ge nanoclusters on Si

<p>Abstract</p><p>In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of&#9251;an unusually wide applicability, the buffer...

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Bibliographic Details
Main Authors: Li AP, Wendelken JF
Format: Article
Language:English
Published: SpringerOpen 2006-01-01
Series:Nanoscale Research Letters
Subjects:
Nanocluster
Buffer layer-assisted growth
BLAG
Ge nanocluster
Photoluminescence
Semiconductor growth
61.46.+w
78.55.Ap
68.37.Lp
78.67.Hc
Online Access:http://dx.doi.org/10.1007/s11671-006-9011-y

Internet

http://dx.doi.org/10.1007/s11671-006-9011-y

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