Buffer layer-assisted growth of Ge nanoclusters on Si
<p>Abstract</p><p>In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2006-01-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1007/s11671-006-9011-y |
| _version_ | 1797766315620958208 |
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| author | Li AP Wendelken JF |
| author_facet | Li AP Wendelken JF |
| author_sort | Li AP |
| collection | DOAJ |
| description | <p>Abstract</p><p>In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offered unprecedented opportunities for fundamental and applied research in nanoscale science and technology. In this article, we review recent progress in the application of the buffer layer-assisted growth method to the fabrication of Ge nanoclusters on Si substrates. In particular, we emphasize the novel configurations of the obtained Ge nanoclusters, which are characterized by the absence of a wetting layer, quasi-zero dimensionality with tunable sizes, and high cluster density in comparison with Ge nanoclusters that are formed with standard Stranski-Krastanov growth methods. The optical emission behaviors are discussed in correlation with the morphological properties.</p> |
| first_indexed | 2024-03-12T20:23:29Z |
| format | Article |
| id | doaj.art-79b14d6f8bf2475084d16bdb08156c96 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T20:23:29Z |
| publishDate | 2006-01-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-79b14d6f8bf2475084d16bdb08156c962023-08-02T00:43:34ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2006-01-01111119Buffer layer-assisted growth of Ge nanoclusters on SiLi APWendelken JF<p>Abstract</p><p>In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer layer-assisted growth method has provided a unique avenue for creation of nanostructures that are otherwise impossible to grow, and thus offered unprecedented opportunities for fundamental and applied research in nanoscale science and technology. In this article, we review recent progress in the application of the buffer layer-assisted growth method to the fabrication of Ge nanoclusters on Si substrates. In particular, we emphasize the novel configurations of the obtained Ge nanoclusters, which are characterized by the absence of a wetting layer, quasi-zero dimensionality with tunable sizes, and high cluster density in comparison with Ge nanoclusters that are formed with standard Stranski-Krastanov growth methods. The optical emission behaviors are discussed in correlation with the morphological properties.</p>http://dx.doi.org/10.1007/s11671-006-9011-yNanoclusterBuffer layer-assisted growthBLAGGe nanoclusterPhotoluminescenceSemiconductor growth61.46.+w78.55.Ap68.37.Lp78.67.Hc |
| spellingShingle | Li AP Wendelken JF Buffer layer-assisted growth of Ge nanoclusters on Si Nanoscale Research Letters Nanocluster Buffer layer-assisted growth BLAG Ge nanocluster Photoluminescence Semiconductor growth 61.46.+w 78.55.Ap 68.37.Lp 78.67.Hc |
| title | Buffer layer-assisted growth of Ge nanoclusters on Si |
| title_full | Buffer layer-assisted growth of Ge nanoclusters on Si |
| title_fullStr | Buffer layer-assisted growth of Ge nanoclusters on Si |
| title_full_unstemmed | Buffer layer-assisted growth of Ge nanoclusters on Si |
| title_short | Buffer layer-assisted growth of Ge nanoclusters on Si |
| title_sort | buffer layer assisted growth of ge nanoclusters on si |
| topic | Nanocluster Buffer layer-assisted growth BLAG Ge nanocluster Photoluminescence Semiconductor growth 61.46.+w 78.55.Ap 68.37.Lp 78.67.Hc |
| url | http://dx.doi.org/10.1007/s11671-006-9011-y |
| work_keys_str_mv | AT liap bufferlayerassistedgrowthofgenanoclustersonsi AT wendelkenjf bufferlayerassistedgrowthofgenanoclustersonsi |