Buffer layer-assisted growth of Ge nanoclusters on Si
<p>Abstract</p><p>In the buffer layer-assisted growth method, a condensed inert gas layer of xenon, with low-surface free energy, is used as a buffer to prevent direct interactions of deposited atoms with substrates. Because of␣an unusually wide applicability, the buffer...
Main Authors: | Li AP, Wendelken JF |
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Format: | Article |
Language: | English |
Published: |
SpringerOpen
2006-01-01
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Series: | Nanoscale Research Letters |
Subjects: | |
Online Access: | http://dx.doi.org/10.1007/s11671-006-9011-y |
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