Frequency- and temperature-dependent dielectric response in hybrid molecular beam epitaxy-grown BaSnO3 films

We report on the dielectric response of epitaxial BaSnO3 films grown on Nb-doped SrTiO3 (001) substrates using a hybrid molecular beam epitaxy approach. Metal-insulator-metal capacitors were fabricated to obtain frequency- and temperature-dependent dielectric constant and loss. Irrespective of film...

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Bibliographic Details
Main Authors: William Nunn, Abhinav Prakash, Arghya Bhowmik, Ryan Haislmaier, Jin Yue, Juan Maria Garcia Lastra, Bharat Jalan
Format: Article
Language:English
Published: AIP Publishing LLC 2018-06-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5027567