Arsenic Irradiation Induced Atomic Interdiffusion of InxGa1-xAs/InP Quantum Well Structures

Arsenic Irradiation Induced Atomic Interdiffusion of InxGa1-xAs/InP Quantum Well Structures

The atomic intermixing of InxGa1-xAs/InP quantum well structures induced by arsenic irradiation has been investigated using photoluminescence (PL) measurement. The ion doses used were varried from 5x1011 As/cm2 to 1x1013 As/cm2. Also, the irradiation temperature were carried out from -200oC to 300oC...

Full description

Bibliographic Details
Main Authors: P.L. Gareso, H.H. Tan, C. Jagadish
Format: Article
Language:English
Published: Center for Development of Nuclear Informatics, National Nuclear Energy Agency (BATAN) 2012-12-01
Series:Atom Indonesia
Subjects:
Arsenic irradiation
Atomic interdiffusion
Energy shift
Irradiation dose
Online Access:http://aij.batan.go.id/index.php/aij/article/view/177

Internet

http://aij.batan.go.id/index.php/aij/article/view/177

Similar Items