Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes

Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes

Electron-leakage is a deep-rooted problem for nitride-based light-emitting diodes (LEDs), particularly for AlGaN-based deep-ultraviolet (DUV) LEDs. In this paper, a specific design for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al composition of the last quantum barrier to the...

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Bibliographic Details
Main Authors: Xiaoli Ji, Jianchang Yan, Yanan Guo, Lili Sun, Tongbo Wei, Yun Zhang, Junxi Wang, Fuhua Yang, Jinmin Li
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
ultraviolet
light-emitting diodes
AlGaN
electron-leakage
quantum efficiency
Online Access:https://ieeexplore.ieee.org/document/7457213/

Internet

https://ieeexplore.ieee.org/document/7457213/

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