Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes
Electron-leakage is a deep-rooted problem for nitride-based light-emitting diodes (LEDs), particularly for AlGaN-based deep-ultraviolet (DUV) LEDs. In this paper, a specific design for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al composition of the last quantum barrier to the...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2016-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7457213/ |
| _version_ | 1819121013458206720 |
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| author | Xiaoli Ji Jianchang Yan Yanan Guo Lili Sun Tongbo Wei Yun Zhang Junxi Wang Fuhua Yang Jinmin Li |
| author_facet | Xiaoli Ji Jianchang Yan Yanan Guo Lili Sun Tongbo Wei Yun Zhang Junxi Wang Fuhua Yang Jinmin Li |
| author_sort | Xiaoli Ji |
| collection | DOAJ |
| description | Electron-leakage is a deep-rooted problem for nitride-based light-emitting diodes (LEDs), particularly for AlGaN-based deep-ultraviolet (DUV) LEDs. In this paper, a specific design for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al composition of the last quantum barrier to the same value as that of the electron-blocking layer accompanied with composition-graded p-AlGaN layer, is proposed to reduce electron leakage. Simulation results demonstrate that this design can effectively reduce electron leakage and hence increase internal quantum efficiency. Furthermore, fabricated devices with at an emitting wavelength of 292 nm verify remarkably enhanced light-output power. At 20-mA injection current, the proposed structure achieved a light-output increment as high as 98%, compared with the conventional structure. |
| first_indexed | 2024-12-22T06:29:48Z |
| format | Article |
| id | doaj.art-79e8720471d74d9397d20b90f201cea8 |
| institution | Directory Open Access Journal |
| issn | 1943-0655 |
| language | English |
| last_indexed | 2024-12-22T06:29:48Z |
| publishDate | 2016-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj.art-79e8720471d74d9397d20b90f201cea82022-12-21T18:35:45ZengIEEEIEEE Photonics Journal1943-06552016-01-01831710.1109/JPHOT.2016.25538487457213Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting DiodesXiaoli Ji0Jianchang Yan1Yanan Guo2Lili Sun3Tongbo Wei4Yun Zhang5Junxi Wang6Fuhua Yang7Jinmin Li8State Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaEngineering Research Center for Semiconductor Integrated Technologies, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaState Key Laboratory of Solid-State Lighting, Beijing Engineering Research Center for the Third Generation Semiconductor Materials and Application, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, ChinaElectron-leakage is a deep-rooted problem for nitride-based light-emitting diodes (LEDs), particularly for AlGaN-based deep-ultraviolet (DUV) LEDs. In this paper, a specific design for the electron-blocking structure in AlGaN DUV LEDs, increasing the Al composition of the last quantum barrier to the same value as that of the electron-blocking layer accompanied with composition-graded p-AlGaN layer, is proposed to reduce electron leakage. Simulation results demonstrate that this design can effectively reduce electron leakage and hence increase internal quantum efficiency. Furthermore, fabricated devices with at an emitting wavelength of 292 nm verify remarkably enhanced light-output power. At 20-mA injection current, the proposed structure achieved a light-output increment as high as 98%, compared with the conventional structure.https://ieeexplore.ieee.org/document/7457213/ultravioletlight-emitting diodesAlGaNelectron-leakagequantum efficiency |
| spellingShingle | Xiaoli Ji Jianchang Yan Yanan Guo Lili Sun Tongbo Wei Yun Zhang Junxi Wang Fuhua Yang Jinmin Li Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes IEEE Photonics Journal ultraviolet light-emitting diodes AlGaN electron-leakage quantum efficiency |
| title | Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes |
| title_full | Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes |
| title_fullStr | Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes |
| title_full_unstemmed | Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes |
| title_short | Tailoring of Energy Band in Electron-Blocking Structure Enhancing the Efficiency of <roman>AlGaN</roman>-Based Deep Ultraviolet Light-Emitting Diodes |
| title_sort | tailoring of energy band in electron blocking structure enhancing the efficiency of roman algan roman based deep ultraviolet light emitting diodes |
| topic | ultraviolet light-emitting diodes AlGaN electron-leakage quantum efficiency |
| url | https://ieeexplore.ieee.org/document/7457213/ |
| work_keys_str_mv | AT xiaoliji tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes AT jianchangyan tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes AT yananguo tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes AT lilisun tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes AT tongbowei tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes AT yunzhang tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes AT junxiwang tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes AT fuhuayang tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes AT jinminli tailoringofenergybandinelectronblockingstructureenhancingtheefficiencyofromanalganromanbaseddeepultravioletlightemittingdiodes |