Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

Commercial P-Channel Power VDMOSFET as X-ray Dosimeter

The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray...

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Bibliographic Details
Main Authors: Goran S. Ristić, Stefan D. Ilić, Sandra Veljković, Aleksandar S. Jevtić, Strahinja Dimitrijević, Alberto J. Palma, Srboljub Stanković, Marko S. Andjelković
Format: Article
Language:English
Published: MDPI AG 2022-03-01
Series:Electronics
Subjects:
VDMOSFETs
X-ray
irradiation
sensitivity
fading
Online Access:https://www.mdpi.com/2079-9292/11/6/918

Internet

https://www.mdpi.com/2079-9292/11/6/918

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