Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

Suppressing Buffer-Induced Current Collapse in GaN HEMTs with a Source-Connected p-GaN (SCPG): A Simulation Study

Carbon doping in the buffer of AlGaN/GaN high-electron-mobility transistors (HEMTs) leads to the notorious current collapse phenomenon. In this paper, an HEMT structure with a source-connected p-GaN (SCPG) embedded in the carbon-doped semi-insulating buffer is proposed to suppress the buffer-induced...

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Bibliographic Details
Main Authors: Wei Lin, Maojun Wang, Haozhe Sun, Bing Xie, Cheng P. Wen, Yilong Hao, Bo Shen
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Electronics
Subjects:
gallium nitride (GaN)
high-electron-mobility transistor (HEMT)
current collapse
carbon-doped buffer
Online Access:https://www.mdpi.com/2079-9292/10/8/942

Internet

https://www.mdpi.com/2079-9292/10/8/942

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