Analysis of Defects and Electrical Characteristics of Variable-Temperature Proton-Irradiated 4H-SiC JBS Diodes
The defects and electrical characteristics of 4H-SiC JBS diodes irradiated by 2 MeV protons under irradiation temperatures of 100–400 K were studied. Forward and reverse current–voltage (I–V), capacitance–voltage (C–V), and deep-level transient spectroscopy (DLTS) measurements were performed to stud...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-04-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/11/9/1341 |