Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System

Abstract Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device to demonstrate conductance quantization b...

Full description

Bibliographic Details
Main Authors: Chandreswar Mahata, Muhammad Ismail, Myounggon Kang, Sungjun Kim
Format: Article
Language:English
Published: SpringerOpen 2022-06-01
Series:Nanoscale Research Letters
Subjects:
Resistive switching
Al-doped HfO2
ALD TiN-nanoparticles
Quantum conductance
Synaptic plasticity
Online Access:https://doi.org/10.1186/s11671-022-03696-2

Internet

https://doi.org/10.1186/s11671-022-03696-2

Similar Items