Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System
Abstract Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device to demonstrate conductance quantization b...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2022-06-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s11671-022-03696-2 |
| _version_ | 1797757403531313152 |
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| author | Chandreswar Mahata Muhammad Ismail Myounggon Kang Sungjun Kim |
| author_facet | Chandreswar Mahata Muhammad Ismail Myounggon Kang Sungjun Kim |
| author_sort | Chandreswar Mahata |
| collection | DOAJ |
| description | Abstract Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device to demonstrate conductance quantization behavior to achieve the high-density memory application. Stepwise change in conductance under DC and pulse voltage confirms the quantized conductance states with integer and half-integer multiples of G0. Reactive TiN-NPs inside the switching layer helps to form and rupture the atomic scale conductive filaments due to enhancing the local electric field inside. Bipolar resistive switching characteristics at low SET/RESET voltage were obtained with memory window > 10 and stable endurance of 103 cycles. Short-term and long-term plasticities are successfully demonstrated by modulating the pre-spike number, magnitude, and frequency. The quantized conductance behavior with promising synaptic properties obtained in the experiments suggests HfAlOx/TiN-NP/HfAlOx switching layer is suitable for multilevel high-density storage RRAM devices. |
| first_indexed | 2024-03-12T18:14:24Z |
| format | Article |
| id | doaj.art-7a3d677237d544b3b2defc31b0d540b6 |
| institution | Directory Open Access Journal |
| issn | 1556-276X |
| language | English |
| last_indexed | 2024-03-12T18:14:24Z |
| publishDate | 2022-06-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-7a3d677237d544b3b2defc31b0d540b62023-08-02T09:11:33ZengSpringerOpenNanoscale Research Letters1556-276X2022-06-011711910.1186/s11671-022-03696-2Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic SystemChandreswar Mahata0Muhammad Ismail1Myounggon Kang2Sungjun Kim3Division of Electronics and Electrical Engineering, Dongguk UniversityDivision of Electronics and Electrical Engineering, Dongguk UniversityDepartment of Electronics Engineering, Korea National University of TransportationDivision of Electronics and Electrical Engineering, Dongguk UniversityAbstract Controlled conductive filament formation in the resistive random access memory device is an essential requirement for analog resistive switching to develop artificial synapses. In this work, we have studied Au/Ti/HfAlOx/TiN-NP/HfAlOx/ITO RRAM device to demonstrate conductance quantization behavior to achieve the high-density memory application. Stepwise change in conductance under DC and pulse voltage confirms the quantized conductance states with integer and half-integer multiples of G0. Reactive TiN-NPs inside the switching layer helps to form and rupture the atomic scale conductive filaments due to enhancing the local electric field inside. Bipolar resistive switching characteristics at low SET/RESET voltage were obtained with memory window > 10 and stable endurance of 103 cycles. Short-term and long-term plasticities are successfully demonstrated by modulating the pre-spike number, magnitude, and frequency. The quantized conductance behavior with promising synaptic properties obtained in the experiments suggests HfAlOx/TiN-NP/HfAlOx switching layer is suitable for multilevel high-density storage RRAM devices.https://doi.org/10.1186/s11671-022-03696-2Resistive switchingAl-doped HfO2ALD TiN-nanoparticlesQuantum conductanceSynaptic plasticity |
| spellingShingle | Chandreswar Mahata Muhammad Ismail Myounggon Kang Sungjun Kim Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System Nanoscale Research Letters Resistive switching Al-doped HfO2 ALD TiN-nanoparticles Quantum conductance Synaptic plasticity |
| title | Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System |
| title_full | Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System |
| title_fullStr | Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System |
| title_full_unstemmed | Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System |
| title_short | Synaptic Plasticity and Quantized Conductance States in TiN-Nanoparticles-Based Memristor for Neuromorphic System |
| title_sort | synaptic plasticity and quantized conductance states in tin nanoparticles based memristor for neuromorphic system |
| topic | Resistive switching Al-doped HfO2 ALD TiN-nanoparticles Quantum conductance Synaptic plasticity |
| url | https://doi.org/10.1186/s11671-022-03696-2 |
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