Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network
In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the four-stage non-uniform distributed amplifier structure...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2022-11-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/12/21/11077 |