Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network
In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the four-stage non-uniform distributed amplifier structure...
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| Format: | Article |
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MDPI AG
2022-11-01
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| Series: | Applied Sciences |
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| Online Access: | https://www.mdpi.com/2076-3417/12/21/11077 |
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| author | Tongyao Luan Yongqing Leng Xin Qiu Xingli Cui Aizhen Hu Bo Xu Yatao Peng |
| author_facet | Tongyao Luan Yongqing Leng Xin Qiu Xingli Cui Aizhen Hu Bo Xu Yatao Peng |
| author_sort | Tongyao Luan |
| collection | DOAJ |
| description | In this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the four-stage non-uniform distributed amplifier structure. In order to improve the efficiency of the PA, a harmonic suppression network is added at the output of the drain artificial transmission line. At the same time, a capacitor is connected in series at the input of the gate, which is used to compensate for the phase offset of the gate and increase the cut-off frequency of the PA. The final gate width of the first stage is 0.56 μm, and the other three-stage gate widths are all 0.32 μm. Over the frequency range of 2–16 GHz, the simulated results of this NDPA exhibit a power-added efficiency (PAE) of 16.6–27%, a saturated continuous wave (CW) output power of 35–37 dBm, a small signal gain of 9.1–11.6 dB, and output return losses of 5–15 dB. |
| first_indexed | 2024-03-09T19:18:10Z |
| format | Article |
| id | doaj.art-7a4482c74da24d559d4d7879e126f3cd |
| institution | Directory Open Access Journal |
| issn | 2076-3417 |
| language | English |
| last_indexed | 2024-03-09T19:18:10Z |
| publishDate | 2022-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Applied Sciences |
| spelling | doaj.art-7a4482c74da24d559d4d7879e126f3cd2023-11-24T03:37:38ZengMDPI AGApplied Sciences2076-34172022-11-0112211107710.3390/app122111077Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression NetworkTongyao Luan0Yongqing Leng1Xin Qiu2Xingli Cui3Aizhen Hu4Bo Xu5Yatao Peng6Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaInstitute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, ChinaThe State Key Laboratory of Analog and Mixed-Signal VLSI, Department of ECE, Faculty of Science and Technology, University of Macau, Taipa, Macao 999078, ChinaIn this paper, an ultra-wideband (UWB) power amplifier (PA) on a 0.25 μm gallium-nitride (GaN) on silicon carbide (SiC) high-electron-mobility transistor (HEMT) process, operating in Ku-band, is presented. The broadband PA design is based on the four-stage non-uniform distributed amplifier structure. In order to improve the efficiency of the PA, a harmonic suppression network is added at the output of the drain artificial transmission line. At the same time, a capacitor is connected in series at the input of the gate, which is used to compensate for the phase offset of the gate and increase the cut-off frequency of the PA. The final gate width of the first stage is 0.56 μm, and the other three-stage gate widths are all 0.32 μm. Over the frequency range of 2–16 GHz, the simulated results of this NDPA exhibit a power-added efficiency (PAE) of 16.6–27%, a saturated continuous wave (CW) output power of 35–37 dBm, a small signal gain of 9.1–11.6 dB, and output return losses of 5–15 dB.https://www.mdpi.com/2076-3417/12/21/11077GaN-On-SiC HEMTnon-uniform distributedpower amplifierultra-widebandharmonic suppression |
| spellingShingle | Tongyao Luan Yongqing Leng Xin Qiu Xingli Cui Aizhen Hu Bo Xu Yatao Peng Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network Applied Sciences GaN-On-SiC HEMT non-uniform distributed power amplifier ultra-wideband harmonic suppression |
| title | Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network |
| title_full | Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network |
| title_fullStr | Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network |
| title_full_unstemmed | Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network |
| title_short | Design of 2–16 GHz Non-Uniform Distributed GaN HEMT MMIC Power Amplifier with Harmonic Suppression Network |
| title_sort | design of 2 16 ghz non uniform distributed gan hemt mmic power amplifier with harmonic suppression network |
| topic | GaN-On-SiC HEMT non-uniform distributed power amplifier ultra-wideband harmonic suppression |
| url | https://www.mdpi.com/2076-3417/12/21/11077 |
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