Semiconductor image converter
The structural scheme, band diagram, working principle and electrical properties of semiconductor image converter made with a p-n Si-ZnSe matrix structure are reviewed. It’s shown that the p-n Si-ZnSe photodiode array can be used as a sensing device and optical radiation introscopes.
| Главные авторы: | , |
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| Формат: | Статья |
| Язык: | Russian |
| Опубликовано: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Серии: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Предметы: | |
| Online-ссылка: | https://doklady.bsuir.by/jour/article/view/115 |