Semiconductor image converter
The structural scheme, band diagram, working principle and electrical properties of semiconductor image converter made with a p-n Si-ZnSe matrix structure are reviewed. It’s shown that the p-n Si-ZnSe photodiode array can be used as a sensing device and optical radiation introscopes.
| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/115 |
| _version_ | 1797881225694674944 |
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| author | V. A. Sychic N. N. Ulasyuk |
| author_facet | V. A. Sychic N. N. Ulasyuk |
| author_sort | V. A. Sychic |
| collection | DOAJ |
| description | The structural scheme, band diagram, working principle and electrical properties of semiconductor image converter made with a p-n Si-ZnSe matrix structure are reviewed. It’s shown that the p-n Si-ZnSe photodiode array can be used as a sensing device and optical radiation introscopes. |
| first_indexed | 2024-04-10T03:16:34Z |
| format | Article |
| id | doaj.art-7a5a7f049ea94271bf263ff257108b68 |
| institution | Directory Open Access Journal |
| issn | 1729-7648 |
| language | Russian |
| last_indexed | 2024-04-10T03:16:34Z |
| publishDate | 2019-06-01 |
| publisher | Educational institution «Belarusian State University of Informatics and Radioelectronics» |
| record_format | Article |
| series | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| spelling | doaj.art-7a5a7f049ea94271bf263ff257108b682023-03-13T07:33:10ZrusEducational institution «Belarusian State University of Informatics and Radioelectronics»Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki1729-76482019-06-0107121124114Semiconductor image converterV. A. Sychic0N. N. Ulasyuk1Белорусский национальный технический университетБелорусский национальный технический университетThe structural scheme, band diagram, working principle and electrical properties of semiconductor image converter made with a p-n Si-ZnSe matrix structure are reviewed. It’s shown that the p-n Si-ZnSe photodiode array can be used as a sensing device and optical radiation introscopes.https://doklady.bsuir.by/jour/article/view/115полупроводниковый преобразовательматричная структуразонная диаграммаэлектрофизические свойства |
| spellingShingle | V. A. Sychic N. N. Ulasyuk Semiconductor image converter Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki полупроводниковый преобразователь матричная структура зонная диаграмма электрофизические свойства |
| title | Semiconductor image converter |
| title_full | Semiconductor image converter |
| title_fullStr | Semiconductor image converter |
| title_full_unstemmed | Semiconductor image converter |
| title_short | Semiconductor image converter |
| title_sort | semiconductor image converter |
| topic | полупроводниковый преобразователь матричная структура зонная диаграмма электрофизические свойства |
| url | https://doklady.bsuir.by/jour/article/view/115 |
| work_keys_str_mv | AT vasychic semiconductorimageconverter AT nnulasyuk semiconductorimageconverter |