Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

Highly Improved Switching Properties in Flexible Aluminum Oxide Resistive Memories Based on a Multilayer Device Structure

Abstract Multilayer aluminum oxide (Al2O3) resistive memory devices, exhibiting robust switching properties fabricated on a flexible polyethylene naphthalate substrate using only physical vapor deposition methods at room temperature, are reported here. Improved reliability and robust switching prope...

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Bibliographic Details
Main Authors: Jingon Jang, Han‐Hyeong Choi, Sung Hoon Paik, Jai Kyeong Kim, Seungjun Chung, Jong Hyuk Park
Format: Article
Language:English
Published: Wiley-VCH 2018-12-01
Series:Advanced Electronic Materials
Subjects:
bipolar switching
filamentary conduction
flexibility
oxide memory systems
resistive memory
Online Access:https://doi.org/10.1002/aelm.201800355

Internet

https://doi.org/10.1002/aelm.201800355

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