Two-Dimensional Octuple-Atomic-Layer M<sub>2</sub>Si<sub>2</sub>N<sub>4</sub> (M = Al, Ga and In) with Long Carrier Lifetime

Two-Dimensional Octuple-Atomic-Layer M<sub>2</sub>Si<sub>2</sub>N<sub>4</sub> (M = Al, Ga and In) with Long Carrier Lifetime

Bulk III-nitride materials MN (M = Al, Ga and In) and their alloys have been widely used in high-power electronic and optoelectronic devices, but stable two-dimensional (2D) III-nitride materials, except h-BN, have not been realized yet. A new kind of 2D III-nitride material M<inline-formula>&...

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書目詳細資料
Main Authors: Yimin Ding, Kui Xue, Jing Zhang, Luo Yan, Qiaoqiao Li, Yisen Yao, Liujiang Zhou
格式: Article
語言:English
出版: MDPI AG 2023-02-01
叢編:Micromachines
主題:
2D III-nitride materials
electronic property
optical property
carrier lifetime
first-principles calculations
在線閱讀:https://www.mdpi.com/2072-666X/14/2/405

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https://www.mdpi.com/2072-666X/14/2/405

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