Regulating the Electrical and Mechanical Properties of TaS2 Films via van der Waals and Electrostatic Interaction for High Performance Electromagnetic Interference Shielding

Regulating the Electrical and Mechanical Properties of TaS2 Films via van der Waals and Electrostatic Interaction for High Performance Electromagnetic Interference Shielding

Highlights A flexible freestanding TaS2 film (thickness = 3.1 μm) exhibits an ultralow void ratio of 6.01%, an ultra-high electrical conductivity of 2,666 S cm−1, an electromagnetic interference shielding effectiveness (EMI SE) of 41.8 dB, an absolute EMI SE (SSE/t) of 27,859 dB cm2 g−1, and excelle...

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Bibliographic Details
Main Authors: Fukang Deng, Jianhong Wei, Yadong Xu, Zhiqiang Lin, Xi Lu, Yan-Jun Wan, Rong Sun, Ching-Ping Wong, Yougen Hu
Format: Article
Language:English
Published: SpringerOpen 2023-04-01
Series:Nano-Micro Letters
Subjects:
2D transition metal dichalcogenides
2H-TaS2
Flexibility
Electromagnetic interference shielding
Online Access:https://doi.org/10.1007/s40820-023-01061-1

Internet

https://doi.org/10.1007/s40820-023-01061-1

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