Mobility extraction in ultra thin, body buried oxide and fully depleted silicon-on-insulator MOSFET
<p>In this paper, we extract the mobility of ultra-thin, body buried oxide and fully depleted silicon-on-insulator MOSFET, for different front and back-gate configurations. The mobility values are found by using the Capacitance - Gate Voltage and Current - Gate Voltage characteristics. In addi...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Universidad San Francisco de Quito USFQ
2013-04-01
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| Series: | ACI Avances en Ciencias e Ingenierías |
| Subjects: | |
| Online Access: | http://revistas.usfq.edu.ec/index.php/avances/article/view/124 |