A Simulator for Investigation of Breakdown Characteristics of SiC MOSFETs
Breakdown characteristics play an important role in silicon carbide (SiC) power devices; however, the wide bandgap of SiC poses a challenge for numerical simulation of breakdown characteristics. In this work, a self-developed simulator employing a novel numerical processing method to prevent converg...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-01-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/14/3/983 |