A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter
We propose a low loss and high selectivity bandpass filter with defected structure on GaN-on-Silicon. GaN-on-Si exhibits a high insertion loss due to the presence of parasitic channels at the AlN/Si interface. It is necessary to strengthen the coupling between the resonators to achieve a low loss. H...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10250426/ |