A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter
We propose a low loss and high selectivity bandpass filter with defected structure on GaN-on-Silicon. GaN-on-Si exhibits a high insertion loss due to the presence of parasitic channels at the AlN/Si interface. It is necessary to strengthen the coupling between the resonators to achieve a low loss. H...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10250426/ |
| _version_ | 1797342315361075200 |
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| author | Guanghao Guan Jingxiong Chen Xiaoyi Liu Hong Wang |
| author_facet | Guanghao Guan Jingxiong Chen Xiaoyi Liu Hong Wang |
| author_sort | Guanghao Guan |
| collection | DOAJ |
| description | We propose a low loss and high selectivity bandpass filter with defected structure on GaN-on-Silicon. GaN-on-Si exhibits a high insertion loss due to the presence of parasitic channels at the AlN/Si interface. It is necessary to strengthen the coupling between the resonators to achieve a low loss. However, this results in weaker suppression of adjacent channels and lower selectivity of frequencies. The designed filter consists of square spiral defect structure resonators and a step impedance resonator, which provides tunable transmission zero and facilitates the adjustment of pass band. With an interdigitated capacitor, at a frequency span from 3.3 to 4.9 GHz, the proposed filter has a low insertion loss of 2.71dB and improves the suppression of adjacent channel (5.8 GHz) by 11.2 dB compared to the traditional SIR filter. The out-of-band suppression of the filter is better than 15.93 dB at 20 GHz. Compared to the traditional SIR filter, the proposed filter achieves a steep transition zone, and an out-of-band rejection reduction by at least 6.6 dB. |
| first_indexed | 2024-03-08T10:31:30Z |
| format | Article |
| id | doaj.art-7b4852bcdbf34382aa6b15e1b4692115 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-03-08T10:31:30Z |
| publishDate | 2023-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-7b4852bcdbf34382aa6b15e1b46921152024-01-27T00:01:29ZengIEEEIEEE Journal of the Electron Devices Society2168-67342023-01-011150350910.1109/JEDS.2023.331483810250426A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass FilterGuanghao Guan0Jingxiong Chen1https://orcid.org/0000-0003-3554-537XXiaoyi Liu2Hong Wang3https://orcid.org/0000-0002-8875-0521Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, ChinaEngineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou, ChinaEngineering Research Center for Optoelectronics of Guangdong Province, School of Electronics and Information Engineering, South China University of Technology, Guangzhou, ChinaEngineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, ChinaWe propose a low loss and high selectivity bandpass filter with defected structure on GaN-on-Silicon. GaN-on-Si exhibits a high insertion loss due to the presence of parasitic channels at the AlN/Si interface. It is necessary to strengthen the coupling between the resonators to achieve a low loss. However, this results in weaker suppression of adjacent channels and lower selectivity of frequencies. The designed filter consists of square spiral defect structure resonators and a step impedance resonator, which provides tunable transmission zero and facilitates the adjustment of pass band. With an interdigitated capacitor, at a frequency span from 3.3 to 4.9 GHz, the proposed filter has a low insertion loss of 2.71dB and improves the suppression of adjacent channel (5.8 GHz) by 11.2 dB compared to the traditional SIR filter. The out-of-band suppression of the filter is better than 15.93 dB at 20 GHz. Compared to the traditional SIR filter, the proposed filter achieves a steep transition zone, and an out-of-band rejection reduction by at least 6.6 dB.https://ieeexplore.ieee.org/document/10250426/defect structureGaN-on-Sion-chip |
| spellingShingle | Guanghao Guan Jingxiong Chen Xiaoyi Liu Hong Wang A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter IEEE Journal of the Electron Devices Society defect structure GaN-on-Si on-chip |
| title | A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter |
| title_full | A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter |
| title_fullStr | A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter |
| title_full_unstemmed | A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter |
| title_short | A Low Loss and High Selectivity GaN-on-Si On-Chip Bandpass Filter |
| title_sort | low loss and high selectivity gan on si on chip bandpass filter |
| topic | defect structure GaN-on-Si on-chip |
| url | https://ieeexplore.ieee.org/document/10250426/ |
| work_keys_str_mv | AT guanghaoguan alowlossandhighselectivityganonsionchipbandpassfilter AT jingxiongchen alowlossandhighselectivityganonsionchipbandpassfilter AT xiaoyiliu alowlossandhighselectivityganonsionchipbandpassfilter AT hongwang alowlossandhighselectivityganonsionchipbandpassfilter AT guanghaoguan lowlossandhighselectivityganonsionchipbandpassfilter AT jingxiongchen lowlossandhighselectivityganonsionchipbandpassfilter AT xiaoyiliu lowlossandhighselectivityganonsionchipbandpassfilter AT hongwang lowlossandhighselectivityganonsionchipbandpassfilter |