Scanning-gate-induced effects and spatial mapping of a cavity

Tailored electrostatic potentials are at the heart of semiconductor nanostructures. We present measurements of size and screening effects of the tip-induced potential in scanning gate microscopy on a two-dimensional electron gas. First, we show methods on how to estimate the size of the tip-induced...

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Bibliographic Details
Main Authors: R Steinacher, A A Kozikov, C Rössler, C Reichl, W Wegscheider, T Ihn, K Ensslin
Format: Article
Language:English
Published: IOP Publishing 2015-01-01
Series:New Journal of Physics
Subjects:
Online Access:https://doi.org/10.1088/1367-2630/17/4/043043