Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical m...

Полное описание

Библиографические подробности
Главные авторы:	Dennis Christy, Arata Watanabe, Takashi Egawa
Формат:	Статья
Язык:	English
Опубликовано:	AIP Publishing LLC 2014-10-01
Серии:	AIP Advances
Online-ссылка:	http://dx.doi.org/10.1063/1.4897338

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