Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Lignende værker

• Investigation of interface properties of h-BN and AlN on AlGaN/GaN heterostructures
  af: Whiteside, Matthew David
  Udgivet: (2021)
• Toward AlGaN channel HEMTs on AlN: Polarization-induced 2DEGs in AlN/AlGaN/AlN heterostructures
  af: Jashan Singhal, et al.
  Udgivet: (2022-11-01)
• Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate
  af: Roman B. Adamov, et al.
  Udgivet: (2021-06-01)
• Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111)
  af: Shuiming Li, et al.
  Udgivet: (2016-03-01)
• Structural and optical properties of AlN/GaN and AlN/AlGaN/GaN thin films on silicon substrate prepared by plasma assisted molecular beam epitaxy (MBE)
  af: Ho Xin Jing, et al.
  Udgivet: (2019-03-01)