Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gat...

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Bibliographic Details
Main Authors: Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2024-01-01
Series:Micromachines
Subjects:
p-GaN
indium-tin-oxide (ITO)
ultraviolet photodetector (UVPD)
Online Access:https://www.mdpi.com/2072-666X/15/1/156

Internet

https://www.mdpi.com/2072-666X/15/1/156

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