Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gat...
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| Format: | Article |
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MDPI AG
2024-01-01
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| Online Access: | https://www.mdpi.com/2072-666X/15/1/156 |
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| author | Zhanfei Han Xiangdong Li Hongyue Wang Yuebo Liu Weitao Yang Zesheng Lv Meng Wang Shuzhen You Jincheng Zhang Yue Hao |
| author_facet | Zhanfei Han Xiangdong Li Hongyue Wang Yuebo Liu Weitao Yang Zesheng Lv Meng Wang Shuzhen You Jincheng Zhang Yue Hao |
| author_sort | Zhanfei Han |
| collection | DOAJ |
| description | This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high photo-to-dark current ratio (PDCR) of 3.2 × 10<sup>5</sup>. The quantum wells of the p-GaN/AlGaN and AlGaN/GaN heterojunctions can trap the holes and electrons excited by the UV illumination, thus efficiently triggering a photovoltaic effect and photoconductive effect, separately. Furthermore, the prepared photodetectors allow flexible adjustment of the static bias point, making it adaptable to different environments. Compared to traditional thin-film semi-transparent Ni/Au gates, indium tin oxide (ITO) exhibits higher transmittance. Under 355 nm illumination, the photodetector exhibited a super-high responsivity exceeding 3.5 × 10<sup>4</sup> A/W, and it could even exceed 10<sup>6</sup> A/W under 300 nm illumination. The well-designed UVPD combines both the advantages of the high-transmittance ITO gate and the structure of the commercialized p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), which opens a new possibility of fabricating large-scale, low-cost, and high-performance UVPDs in the future. |
| first_indexed | 2024-03-08T10:40:28Z |
| format | Article |
| id | doaj.art-7b55b01bc6b44340a22ab07378203714 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-08T10:40:28Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-7b55b01bc6b44340a22ab073782037142024-01-26T17:45:33ZengMDPI AGMicromachines2072-666X2024-01-0115115610.3390/mi15010156Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide GateZhanfei Han0Xiangdong Li1Hongyue Wang2Yuebo Liu3Weitao Yang4Zesheng Lv5Meng Wang6Shuzhen You7Jincheng Zhang8Yue Hao9Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaGuangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, ChinaChina Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 511370, ChinaChina Southern Power Grid Technology Co., Ltd., Guangzhou 510080, ChinaSchool of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, ChinaGuangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaGuangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaGuangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaGuangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou 510555, ChinaThis work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate. The two-dimensional electron gas (2DEG) in the quantum well of the polarized AlGaN/GaN heterojunction was efficiently depleted by the p-GaN gate, leading to a high photo-to-dark current ratio (PDCR) of 3.2 × 10<sup>5</sup>. The quantum wells of the p-GaN/AlGaN and AlGaN/GaN heterojunctions can trap the holes and electrons excited by the UV illumination, thus efficiently triggering a photovoltaic effect and photoconductive effect, separately. Furthermore, the prepared photodetectors allow flexible adjustment of the static bias point, making it adaptable to different environments. Compared to traditional thin-film semi-transparent Ni/Au gates, indium tin oxide (ITO) exhibits higher transmittance. Under 355 nm illumination, the photodetector exhibited a super-high responsivity exceeding 3.5 × 10<sup>4</sup> A/W, and it could even exceed 10<sup>6</sup> A/W under 300 nm illumination. The well-designed UVPD combines both the advantages of the high-transmittance ITO gate and the structure of the commercialized p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs), which opens a new possibility of fabricating large-scale, low-cost, and high-performance UVPDs in the future.https://www.mdpi.com/2072-666X/15/1/156p-GaNindium-tin-oxide (ITO)ultraviolet photodetector (UVPD) |
| spellingShingle | Zhanfei Han Xiangdong Li Hongyue Wang Yuebo Liu Weitao Yang Zesheng Lv Meng Wang Shuzhen You Jincheng Zhang Yue Hao Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate Micromachines p-GaN indium-tin-oxide (ITO) ultraviolet photodetector (UVPD) |
| title | Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate |
| title_full | Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate |
| title_fullStr | Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate |
| title_full_unstemmed | Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate |
| title_short | Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate |
| title_sort | highly responsive gate controlled p gan algan gan ultraviolet photodetectors with a high transmittance indium tin oxide gate |
| topic | p-GaN indium-tin-oxide (ITO) ultraviolet photodetector (UVPD) |
| url | https://www.mdpi.com/2072-666X/15/1/156 |
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