Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

Sb and N Incorporation Interplay in GaAsSbN/GaAs Epilayers near Lattice-Matching Condition for 1.0–1.16-eV Photonic Applications

Abstract As promising candidates for solar cell and photodetection applications in the range 1.0–1.16 eV, the growth of dilute nitride GaAsSbN alloys lattice matched to GaAs is studied. With this aim, we have taken advantage of the temperature gradient in the molecular beam epitaxy reactor to analys...

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Bibliographic Details
Main Authors: V. Braza, D. F. Reyes, A. Gonzalo, A. D. Utrilla, T. Ben, J. M. Ulloa, D. González
Format: Article
Language:English
Published: SpringerOpen 2017-05-01
Series:Nanoscale Research Letters
Subjects:
GaAsSbN
Dilute nitride semiconductor
Structural and optical characterization
Online Access:http://link.springer.com/article/10.1186/s11671-017-2129-2

Internet

http://link.springer.com/article/10.1186/s11671-017-2129-2

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