Temperature influences of the interfacial layer in MOS (Pt/TiO2/Si) structures
In this paper present I-V and C-V electrical characteristics of MOS (Pt/TiO2/Si) were reported. In the I-V characteristics the various electric parameter estimated such as the ideality factor (n), barrier height (FB), leakage current (Ic) and saturation current (Io) were estimated and further analy...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Voronezh State University
2023-09-01
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| Series: | Конденсированные среды и межфазные границы |
| Subjects: | |
| Online Access: | https://journals.vsu.ru/kcmf/article/view/11266 |