Analytical and Physical Investigation on Source Resistance in In<i><sub>x</sub></i>Ga<i><sub>1−x</sub></i>As Quantum-Well High-Electron-Mobility Transistors

Analytical and Physical Investigation on Source Resistance in In<i><sub>x</sub></i>Ga<i><sub>1−x</sub></i>As Quantum-Well High-Electron-Mobility Transistors

We present a fully analytical model and physical investigation on the source resistance (<i>R<sub>S</sub></i>) in In<i><sub>x</sub></i>Ga<i><sub>1−x</sub></i>As quantum-well high-electron mobility transistors based on a three-la...

Full description

Bibliographic Details
Main Authors: Ji-Hoon Yoo, In-Geun Lee, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Jae-Hak Lee, Dae-Hyun Kim
Format: Article
Language:English
Published: MDPI AG 2023-02-01
Series:Micromachines
Subjects:
source resistance
TLM
In<i><sub>x</sub></i>Ga<i><sub>1−x</sub></i>As
HEMT
Online Access:https://www.mdpi.com/2072-666X/14/2/439

Internet

https://www.mdpi.com/2072-666X/14/2/439

Similar Items