Experimentally-Verified Modeling of InGaAs Quantum Dots

Experimentally-Verified Modeling of InGaAs Quantum Dots

We develop a model of an epitaxial self-organized InGaAs quantum dot buried in GaAs, which takes into account experimentally determined indium distribution inside the QD, its geometry and crystallography. The problem of solid mechanics was solved to determine the stress-strain field. Then, the param...

Full description

Bibliographic Details
Main Authors: Alexander N. Kosarev, Vladimir V. Chaldyshev, Nikolay Cherkashin
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Nanomaterials
Subjects:
quantum dot
InGaAs
modeling
localized states
strain-stress field
Online Access:https://www.mdpi.com/2079-4991/12/12/1967

Internet

https://www.mdpi.com/2079-4991/12/12/1967

Similar Items