Mechanism of novel defect multiplication impacting high power 4H-SiC devices

Mechanism of novel defect multiplication impacting high power 4H-SiC devices

Basal plane dislocations and stacking faults are critical defects influencing silicon carbide (SiC) based high power devices that are rapidly emerging to enable the future needs of electric vehicles, locomotives, renewables, and grid-scale applications. Microstructural properties of three novel inte...

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Bibliographic Details
Main Authors: N.A. Mahadik, M. Dudley, B. Raghothamachar, Z. Chen, R.E. Stahlbush, M. Hinojosa, A. Lelis, W. Sung
Format: Article
Language:English
Published: Elsevier 2024-12-01
Series:Materials & Design
Subjects:
Properties of dislocations
Stacking faults
Defect multiplication
Microstructural evolution
Photoluminescence imaging
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127524008104

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http://www.sciencedirect.com/science/article/pii/S0264127524008104

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