Numerical study of thermal stress during different stages of silicon Czochralski crystal growth

In this paper, the influence of various crystal heights to the crystal/melt interface shape and thermal stresses distribution in the large diameter (300 mm) of the silicon single crystal growth in a Czochralski process was studied numerically. A tow dimensional fluid flow and heat transfer with soli...

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Bibliographic Details
Main Authors: A. Benmeddour, S. Meziani
Format: Article
Language:English
Published: Renewable Energy Development Center (CDER) 2009-12-01
Series:Revue des Énergies Renouvelables
Subjects:
Online Access:https://revue.cder.dz/index.php/rer/article/view/163