Numerical study of thermal stress during different stages of silicon Czochralski crystal growth
In this paper, the influence of various crystal heights to the crystal/melt interface shape and thermal stresses distribution in the large diameter (300 mm) of the silicon single crystal growth in a Czochralski process was studied numerically. A tow dimensional fluid flow and heat transfer with soli...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Renewable Energy Development Center (CDER)
2009-12-01
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Series: | Revue des Énergies Renouvelables |
Subjects: | |
Online Access: | https://revue.cder.dz/index.php/rer/article/view/163 |