Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances

Comparative Study of Negative Capacitance Field-Effect Transistors with Different MOS Capacitances

Abstract We demonstrate the negative capacitance (NC) effect of HfZrOx-based field-effect transistors (FETs) in the experiments. Improved I DS, SS, and G m of NCFET have been achieved in comparison with control metal oxide semiconductor (MOS) FET. In this experiment, the bottom MIS transistors with...

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Bibliographic Details
Main Authors: Jing Li, Yan Liu, Genquan Han, Jiuren Zhou, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2019-05-01
Series:Nanoscale Research Letters
Subjects:
Germanium
Negative capacitance
Passivation time
Online Access:http://link.springer.com/article/10.1186/s11671-019-3013-z

Internet

http://link.springer.com/article/10.1186/s11671-019-3013-z

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