Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering

In this work, an Electrostatic Doped Carbon Nanotube Tunneling FET (ED CNT-TFET) has been designed and simulated using a work function engineering technique. An intrinsic CNT is introduced as a channel material and a doped pocket is created between the source and the channel by utilizing an appropri...

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Bibliographic Details
Main Authors: Mahmoud Ossaimee, Ahmed Salah, Salah H. Gamal, Ahmed Shaker, M.S. Salem
Format: Article
Language:English
Published: Elsevier 2023-03-01
Series:Ain Shams Engineering Journal
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2090447922001599