Characteristics comparison of SiC and Si drift step recovery diode
In order to evaluate the prospects of drift step recovery diode (DSRD) based on Silicon Carbide (SiC) in pulsed power field, the characteristics of DSRD based on SiC and Silicon (Si) are compared. The simulation model of the circuit based on Sentaurus TCAD is established and a trigger circuit using...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-10-01
|
| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S277237042300010X |