Characterization of Fe-doped In-Sb-Te (Fe: 10 at.%) material with individual electrical-phase-change and magnetic properties
We propose a new electrical-phase-change magnetic material, namely Fe-doped In-Sb-Te (FIST), for possible non-volatile multi-bit memory applications. FIST was formed by typical co-sputter method with Fe 10 at.% doping in In3Sb1Te2. FIST offers the electrical-phase-change and magnetic properties by w...
Main Authors: | , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2011-06-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.3609265 |