Characterization of Fe-doped In-Sb-Te (Fe: 10 at.%) material with individual electrical-phase-change and magnetic properties

We propose a new electrical-phase-change magnetic material, namely Fe-doped In-Sb-Te (FIST), for possible non-volatile multi-bit memory applications. FIST was formed by typical co-sputter method with Fe 10 at.% doping in In3Sb1Te2. FIST offers the electrical-phase-change and magnetic properties by w...

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Bibliographic Details
Main Authors: Young Mi Lee, Dang Duc Dung, Sunglae Cho, Min Sang Jung, Duck Kyun Choi, Docheon Ahn, Min Kyu Kim, Jae-Young Kim, Min-Cherl Jung
Format: Article
Language:English
Published: AIP Publishing LLC 2011-06-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.3609265