Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands

Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands

<p>Abstract</p> <p>For randomly nucleated SiGe/Si(001) islands, a significantly stronger blue-shift of the PL spectra as a function of the excitation intensity is observed when compared to islands grown on patterned substrates side by side within the same run in a solid source mole...

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Bibliographic Details
Main Authors: Brehm M, Grydlik M, Hackl F, Lausecker E, Fromherz T, Bauer G
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
SiGe
Island
Photoluminescence
AFM
Lateral ordering
Intermixing
Online Access:http://dx.doi.org/10.1007/s11671-010-9713-z

Internet

http://dx.doi.org/10.1007/s11671-010-9713-z

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