Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation
In this study, we investigated the temperature dependence and size effect of the thermal boundary resistance at Si/Ge interfaces by non-equilibrium molecular dynamics (MD) simulations using the direct method with the Stillinger-Weber potential. The simulations were performed at four temperatures for...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2015-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4916974 |