Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation

Thermal boundary resistance at Si/Ge interfaces by molecular dynamics simulation

In this study, we investigated the temperature dependence and size effect of the thermal boundary resistance at Si/Ge interfaces by non-equilibrium molecular dynamics (MD) simulations using the direct method with the Stillinger-Weber potential. The simulations were performed at four temperatures for...

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Bibliographic Details
Main Authors: Tianzhuo Zhan, Satoshi Minamoto, Yibin Xu, Yoshihisa Tanaka, Yutaka Kagawa
Format: Article
Language:English
Published: AIP Publishing LLC 2015-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4916974

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