Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three...

Disgrifiad llawn

Manylion Llyfryddiaeth
Prif Awduron: Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa
Fformat: Erthygl
Iaith:English
Cyhoeddwyd: MDPI AG 2022-09-01
Cyfres:Energies
Pynciau:
power electronics
wide bandgap
gallium nitride
capacitance
traps
TCAD
Mynediad Ar-lein:https://www.mdpi.com/1996-1073/15/19/7062

Rhyngrwyd

https://www.mdpi.com/1996-1073/15/19/7062

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