Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Capacitance Temperature Dependence Analysis of GaN-on-Si Power Transistors

Many kinds of defects are present in the different layers of GaN-on-Si epitaxy. Their study is very important, especially because they play a significant role on the device characteristics. This paper investigates the cause of the temperature dependence of the output and Miller capacitance at three...

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Bibliographic Details
Main Authors: Florian Rigaud-Minet, Julien Buckley, William Vandendaele, Matthew Charles, Marie-Anne Jaud, Elise Rémont, Hervé Morel, Dominique Planson, Romain Gwoziecki, Charlotte Gillot, Véronique Sousa
Format: Article
Language:English
Published: MDPI AG 2022-09-01
Series:Energies
Subjects:
power electronics
wide bandgap
gallium nitride
capacitance
traps
TCAD
Online Access:https://www.mdpi.com/1996-1073/15/19/7062

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https://www.mdpi.com/1996-1073/15/19/7062

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