BARRIER HEIGHT AND CHANGING INSULATOR THICKNESS OF THIN FILM MIS JUNCTIONS
Using thermal evaporation, metal-semiconductor and metal-insulator-semiconductor thin-films were prepared. By using experimental I-V and activation energy measurements, it was determined that barrier height ( ) increases as the thickness of the insulator increases.
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| Format: | Article |
| Language: | English |
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University of Anbar
2017-12-01
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| Series: | مجلة جامعة الانبار للعلوم الصرفة |
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| Online Access: | https://juaps.uoanbar.edu.iq/article_135153_8d6ed1025105ee13e6e29720237bc573.pdf |