Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications

In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO<sub>x</sub>) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10<sup>3</sup> with a low off-current of 0.1 to 0.01 nA. In addition, th...

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Bibliographic Details
Main Authors: Ying-Chen Chen, Yifu Huang, Sumant Sarkar, John Gibbs, Jack Lee
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Journal of Low Power Electronics and Applications
Subjects:
Online Access:https://www.mdpi.com/2079-9268/12/4/55