| Summary: | In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO<sub>x</sub>) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10<sup>3</sup> with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WO<sub>x</sub> selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.
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