Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications

In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO<sub>x</sub>) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10<sup>3</sup> with a low off-current of 0.1 to 0.01 nA. In addition, th...

Full description

Bibliographic Details
Main Authors: Ying-Chen Chen, Yifu Huang, Sumant Sarkar, John Gibbs, Jack Lee
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Journal of Low Power Electronics and Applications
Subjects:
Online Access:https://www.mdpi.com/2079-9268/12/4/55
_version_ 1797456932549689344
author Ying-Chen Chen
Yifu Huang
Sumant Sarkar
John Gibbs
Jack Lee
author_facet Ying-Chen Chen
Yifu Huang
Sumant Sarkar
John Gibbs
Jack Lee
author_sort Ying-Chen Chen
collection DOAJ
description In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO<sub>x</sub>) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10<sup>3</sup> with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WO<sub>x</sub> selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.
first_indexed 2024-03-09T16:14:58Z
format Article
id doaj.art-7c94ce330611443a916af5d1eaf6a0bb
institution Directory Open Access Journal
issn 2079-9268
language English
last_indexed 2024-03-09T16:14:58Z
publishDate 2022-10-01
publisher MDPI AG
record_format Article
series Journal of Low Power Electronics and Applications
spelling doaj.art-7c94ce330611443a916af5d1eaf6a0bb2023-11-24T15:53:25ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682022-10-011245510.3390/jlpea12040055Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory ApplicationsYing-Chen Chen0Yifu Huang1Sumant Sarkar2John Gibbs3Jack Lee4Department of Electrical and Computer Engineering, Northern Arizona University, Flagstaff, AZ 86011, USADepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712, USALam Research, Tualatin, OR 94538, USADepartment of Applied Physics and Materials Science, Northern Arizona University, Flagstaff, AZ 86011, USADepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712, USAIn this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO<sub>x</sub>) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10<sup>3</sup> with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WO<sub>x</sub> selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.https://www.mdpi.com/2079-9268/12/4/55helicesmemristorRRAMselectorvolatile switching
spellingShingle Ying-Chen Chen
Yifu Huang
Sumant Sarkar
John Gibbs
Jack Lee
Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications
Journal of Low Power Electronics and Applications
helices
memristor
RRAM
selector
volatile switching
title Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications
title_full Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications
title_fullStr Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications
title_full_unstemmed Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications
title_short Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications
title_sort direct grown helical shaped tungsten oxide based devices with reconfigurable selectivity for memory applications
topic helices
memristor
RRAM
selector
volatile switching
url https://www.mdpi.com/2079-9268/12/4/55
work_keys_str_mv AT yingchenchen directgrownhelicalshapedtungstenoxidebaseddeviceswithreconfigurableselectivityformemoryapplications
AT yifuhuang directgrownhelicalshapedtungstenoxidebaseddeviceswithreconfigurableselectivityformemoryapplications
AT sumantsarkar directgrownhelicalshapedtungstenoxidebaseddeviceswithreconfigurableselectivityformemoryapplications
AT johngibbs directgrownhelicalshapedtungstenoxidebaseddeviceswithreconfigurableselectivityformemoryapplications
AT jacklee directgrownhelicalshapedtungstenoxidebaseddeviceswithreconfigurableselectivityformemoryapplications