Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications
In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO<sub>x</sub>) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10<sup>3</sup> with a low off-current of 0.1 to 0.01 nA. In addition, th...
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Format: | Article |
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MDPI AG
2022-10-01
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Series: | Journal of Low Power Electronics and Applications |
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Online Access: | https://www.mdpi.com/2079-9268/12/4/55 |
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author | Ying-Chen Chen Yifu Huang Sumant Sarkar John Gibbs Jack Lee |
author_facet | Ying-Chen Chen Yifu Huang Sumant Sarkar John Gibbs Jack Lee |
author_sort | Ying-Chen Chen |
collection | DOAJ |
description | In this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO<sub>x</sub>) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10<sup>3</sup> with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WO<sub>x</sub> selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications. |
first_indexed | 2024-03-09T16:14:58Z |
format | Article |
id | doaj.art-7c94ce330611443a916af5d1eaf6a0bb |
institution | Directory Open Access Journal |
issn | 2079-9268 |
language | English |
last_indexed | 2024-03-09T16:14:58Z |
publishDate | 2022-10-01 |
publisher | MDPI AG |
record_format | Article |
series | Journal of Low Power Electronics and Applications |
spelling | doaj.art-7c94ce330611443a916af5d1eaf6a0bb2023-11-24T15:53:25ZengMDPI AGJournal of Low Power Electronics and Applications2079-92682022-10-011245510.3390/jlpea12040055Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory ApplicationsYing-Chen Chen0Yifu Huang1Sumant Sarkar2John Gibbs3Jack Lee4Department of Electrical and Computer Engineering, Northern Arizona University, Flagstaff, AZ 86011, USADepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712, USALam Research, Tualatin, OR 94538, USADepartment of Applied Physics and Materials Science, Northern Arizona University, Flagstaff, AZ 86011, USADepartment of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX 78712, USAIn this study, a direct-grown helical-shaped tungsten-oxide-based (h-WO<sub>x</sub>) selection device is presented for emerging memory applications. The selectivity in the selection devices is from 10 to 10<sup>3</sup> with a low off-current of 0.1 to 0.01 nA. In addition, the selectivity of volatile switching in the h-WO<sub>x</sub> selection devices is reconfigurable with a pseudo RESET process on the one-time negative voltage operations. The helical-shaped selection devices with the glancing angle deposition (GLAD) method show good compatibility, low power consumption, good selectivity, and good reconfigurability for next-generation memory applications.https://www.mdpi.com/2079-9268/12/4/55helicesmemristorRRAMselectorvolatile switching |
spellingShingle | Ying-Chen Chen Yifu Huang Sumant Sarkar John Gibbs Jack Lee Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications Journal of Low Power Electronics and Applications helices memristor RRAM selector volatile switching |
title | Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications |
title_full | Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications |
title_fullStr | Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications |
title_full_unstemmed | Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications |
title_short | Direct-Grown Helical-Shaped Tungsten-Oxide-Based Devices with Reconfigurable Selectivity for Memory Applications |
title_sort | direct grown helical shaped tungsten oxide based devices with reconfigurable selectivity for memory applications |
topic | helices memristor RRAM selector volatile switching |
url | https://www.mdpi.com/2079-9268/12/4/55 |
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