Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films

Phase Separation in Ge-Rich GeSbTe at Different Length Scales: Melt-Quenched Bulk versus Annealed Thin Films

Integration of the prototypical GeSbTe (GST) ternary alloys, especially on the GeTe-Sb<sub>2</sub>Te<sub>3</sub> tie-line, into non-volatile memory and nanophotonic devices is a relatively mature field of study. Nevertheless, the search for the next best active material with...

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Bibliographic Details
Main Authors: Daniel Tadesse Yimam, A. J. T. Van Der Ree, Omar Abou El Kheir, Jamo Momand, Majid Ahmadi, George Palasantzas, Marco Bernasconi, Bart J. Kooi
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Nanomaterials
Subjects:
phase change materials
Ge-rich GST
pulsed laser deposition
phase separation
GGST
EDX elemental chemical mapping
Online Access:https://www.mdpi.com/2079-4991/12/10/1717

Internet

https://www.mdpi.com/2079-4991/12/10/1717

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